Ge在Ru(0001)表面上生长及其性质研究  

Growth and characteristics of Ge on Ru(0001)

作　　者：胡昉[1] 张寒洁[1] 吕斌[1] 陶永升[1] 李海洋[1] 鲍世宁[1] 何丕模[1] 王学森[2] 

机构地区：[1]浙江大学物理系,杭州310027 [2]新加坡国立大学物理系,新加坡119260

出　　处：《物理学报》2005年第3期1330-1333,共4页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 2 740 72 );高等学校博士学科点专项科研基金 (批准号 :2 0 0 3 0 3 3 5 0 17)资助的课题 .~~

摘　　要：报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究 .STM的实验结果表明Ge在Ru(0 0 0 1)表面的生长呈典型的Stranski_Krastanov生长模式 ,Ge的覆盖度小于单原子层时呈层状生长 ,而从第二层开始呈岛状生长 .XPS测量显示衬底Ru(0 0 0 1)与Ge的相互作用很弱 .Ru(0 0 0 1)表面的Ru 3d5 2 和Ru 3d3 2 芯态结合能分别处于 2 79 8和 2 84 0eV .随着Ge的生长 ,到Ge层的厚度为 2 0个单原子层 ,衬底Ru 3d芯态结合能减小了约 0 2eV ,而Ge 3d芯态结合能从Ge低覆盖度时的 2 8 9eV增加到了 2 9 0eV ,其相对位移约为 0 1eV .Scanning tunneling microscopy (STM) and x-ray photoemission spectroscopy (XPS) studies of germanium growth on Ru (0001) were carried out. STM measurements showed a typical Stranski-Krastanov growth mode of Ge on Ru(0001), i.e. first atomic wetting layer is formed in the submololayer range, and the formation of islands on top of a flat first layer occurs for subsequent layers. XPS measurements showed a weak interaction between Ge and the substrate of Ru(0001). The Ru 3d(5/2) and Ru 3d(3/2) corelevels of Ru(0001) are located at 279.8 and 284.0 eV in binding energy respectively. Upon Ge growth, up to a thickniss of about 20 atomic layers, the Ru 3d corelevels shift downward in binding energy by an amount of about 0.2 eV, while the Ge 3d corelevel shift upward in binding energy from the Ge low coverage limit of 28.9 eV to 29.0 eV, with a relative change of 0.1 eV.

关 键 词：结合能 单原子 表面 x射线光电子能谱(XPS) 衬底 相互作用 性质研究 生长模式 覆盖度 相对位移 

分 类 号：TN304[电子电信—物理电子学]