单根纳米导线场发射增强因子的计算  

Calculation of the enhancement factor for the individual conductive nanowire in field emission

作　　者：王新庆[1] 王淼[1] 李振华[2] 杨兵[1] 王凤飞[1] 何丕模[1] 徐亚伯[1] 

机构地区：[1]浙江大学物理系,杭州310027 [2]浙江大学力学系,杭州310027

出　　处：《物理学报》2005年第3期1347-1351,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 2 710 0 9)资助的课题 .~~

摘　　要：利用镜像电荷模型 ,对静电场中单根纳米导线尖端的电势和电场进行计算 ,得到纳米导线发射体尖端场增强因子表达式为 β0 =h ρ+3 5 .若考虑极板间距对场增强因子的影响 ,则场增强因子的表达式调整为 β =hρ +3 5+A hd3,其中h ,ρ分别为纳米导线的长度和半径 ,d为极板间距 ,A为常数 .结果表明纳米导线的长径比对场增强因子的影响最显著 ,而极板间距对纳米导线的场增强因子只有微弱影响 ,随极板距离的增加而减小 .The potential and the electric field at the end of the individual nanowire under an electric field were calculated with the image charge model. With the nanowire as a field emitter, the enhancement factor was given by the expression: beta(0) = h/rho + 3.5. Taking into account the influence of the anode-cathode distance, the enhancement factor at the end of the nanowire could be adjusted based on the equation: beta = h/rho + 3.5 + A ( h/d)(3), where h and rho are the length and the radius of the nanowire respectively; d is the anode-cathode distance and A is a constant. From the above results, it is concluded that the aspect ratio is the most important factor for the nanowire emitter and the anode-cathode distance also slightly influence the enhancement factor of the nanowire in field emission, and the enhancement factor increases with the decrease of the anode-cathode distance.

关 键 词：场增强因子 镜像电荷 表达式 场发射 电势 静电场 发射体 纳米导线 距离 调整 

分 类 号：TB383[一般工业技术—材料科学与工程]