ZnS晶体中浅电子陷阱对光电子衰减过程的影响  

Effect of Shallow Electron Traps on the Decay Process of Photoelectron in ZnS Crystals

作　　者：董国义[1] 窦军红 张蕾[2] 韦志仁[1] 葛世艳[1] 郑一博[1] 林琳[1] 田少华[1] 

机构地区：[1]河北大学物理科学与技术学院,保定071002 [2]中央司法警官学院,保定071000

出　　处：《人工晶体学报》2005年第1期116-119,共4页Journal of Synthetic Crystals

基　　金：河北省自然科学基金(E2004000117;F2004000130)

摘　　要：本文采用微波吸收法,测量了ZnS:Mn,Cu:I,Br粉末材料受到超短激光脉冲激发后,其光生电子和浅束缚电子的衰减过程。发现制备过程中Mn2+、Cu+、I-、Br-的掺杂量对光生导带电子的衰减过程有明显的影响。光生电子寿命是I-、Br-形成的浅施主能级和Cu+受主能级、Mn2+发光中心共同作用的结果。本文还测量了材料的热释光曲线,Cu+受主能级、Mn2+发光中心会影响热释光强度,证实I-、Br-形成电子陷阱对光生电子和浅陷阱中的电子寿命有延长作用,而Mn2+发光中心会起到缩短寿命的作用。The decay process of photogenerated charge carriers of ZnS: Mn, Cu:I, Br luminescence materials after excitation with short pulse laser was investigated by using microwave absorption dielectric spectrum detection technique in this paper. It is found that the concentration of Mn2+, Cu+, I-, Br- dopant has a great influence on the lifetime of electrons in conduction band. The lifetimes of electrons are determined by the synergistic action of the shallow donor energy level formed by I- and Br-, Cu+ acceptor energy level and Mn2+ luminescence center. In addition, the thermoluminescence spectra of ZnS:Mn, Cu:I, Br luminescent materials were measured. Cu+ acceptor energy level and Mn2+ luminescence center have an effect on the intensity of thermoluminescence spectra. It has been proved that the electron traps formed by I- and Br- prolonged the lifetimes of photoelectrons and shallow-trapped electrons, while Mn2+ luminescence centers shortened the lifetimes of photoelectrons and shallow-trapped electrons.

关 键 词：发光 ZnS晶体 能级 中心 光电子衰减 浅电子陷阱 导带 受主 施主 制备过程 

分 类 号：O782.9[理学—晶体学] TQ174.756[化学工程—陶瓷工业]