A Study on Optical Emission of CF_4+CH_4 Plasma and Deposition Mechanisms of a-C : F, H Films  

作　　者：黄松 辛煜 宁兆元 

机构地区：[1]Department of Physics Suzhou University, 215006 Suzhou, China

出　　处：《Plasma Science and Technology》2005年第1期2669-2672,共4页等离子体科学和技术（英文版）

基　　金：TheprojectsupportedbytheFoundationofKeyLabortoryofThinFilm,JiangsuProvince

摘　　要：Fluorinated amorphous carbon (a-C : F,H) films were deposited by inductively coupled plasma using CH4 and CF4 gases. Actinometrical optical emission spectroscopy (AOES) was used to determine the relative concentrations of various radicals, CF, CF2 CH, C2, H and F, in the plasma as a function of gas flow ratio R, R= [CH4]/([CH4]+[CF4]). The structural evolution of the films were characterized by Fourier transform infrared transmission (FTIR) spectroscopy. The relationship between the film deposition and the precursor radicals in the plasma was discussed. It was shown that CH radical, as well as CF, CF2, C2 radicals are of the precursors, contributing to a-C : F, H film growth.Fluorinated amorphous carbon (a-C : F,H) films were deposited by inductively coupled plasma using CH4 and CF4 gases. Actinometrical optical emission spectroscopy (AOES) was used to determine the relative concentrations of various radicals, CF, CF2 CH, C2, H and F, in the plasma as a function of gas flow ratio R, R= [CH4]/([CH4]+[CF4]). The structural evolution of the films were characterized by Fourier transform infrared transmission (FTIR) spectroscopy. The relationship between the film deposition and the precursor radicals in the plasma was discussed. It was shown that CH radical, as well as CF, CF2, C2 radicals are of the precursors, contributing to a-C : F, H film growth.

关 键 词：optical emission spectroscopy fluorinated carbon film FTIR 

分 类 号：O484.41[理学—固体物理]