化合物半导体/SiO_2纳米复合薄膜的研究现状  

The research status.of the compound semiconductor/SiO_2 nanocomposite thin films

作　　者：马志华[1] 柴跃生[1] 孙钢[1] 张敏刚[1] 

机构地区：[1]太原科技大学,山西太原030024

出　　处：《兵器材料科学与工程》2005年第2期71-74,共4页Ordnance Material Science and Engineering

基　　金：山西省自然科学基金(20041073)

摘　　要：半导体／介质镶嵌纳米复合薄膜具备准零维量子点的特征,这类材料具有三阶光学非线性系数大,响应快,功耗低等特点,在光开关、光存储及全光逻辑运算等领域有着广阔的应用前景。对半导体／介质镶嵌纳米复合薄膜的主要制备方法-射频磁控共溅射法的基本原理及技术特点作了概要介绍。从镶嵌于介质中半导体纳米颗粒非线性光学性质的研究动态入手,分类评述了化合物半导体/SiO2纳米复合薄膜近年来的研究状况,指出了这类复合薄膜的研究重点和发展方向。Compound semiconductor/ medium embedded nanocomposite thin films has the characters of quasizero dimensional quantum dots, which the third - order susceptibility is high, response is fast and power consumption is low. They have strong potential applications in optical bistable switches, optical storage and all optical logical operation. The paper summarily introduces the main preparation methods and basic principle and technology of this kind of films: RF magnetron sputtering deposition. In view of the research progress in nonlinear optical of nanometer - sized semiconductor particles embedded in one kind of medium, the paper reviews the research status of compound semiconductor/SiO2 nanocomposite thin films. The research significance and development orientation of the films have also been presented.

关 键 词：纳米复合薄膜 共溅射法 非线性光学性质 SIO2 三阶光学非线性 介质 量子点 化合物半导体 光开关 功耗 

分 类 号：TN304[电子电信—物理电子学] O647[理学—物理化学]