硅衬底上射频集成电感研究  

Researches of RF Integrated Inductor on Silicon

作　　者：冯冠中[1] 张玉明[1] 张义门[1] 

机构地区：[1]西安电子科技大学微电子所,西安710071

出　　处：《电子器件》2005年第1期25-29,共5页Chinese Journal of Electron Devices

摘　　要：在分析硅衬底上射频螺旋电感物理模型的基础上,从几何参数、工艺参数及电感组成形式考虑,用模拟软件ASITIC(Analysis and Simulation of Spiral Inductors and Transformers for ICs)对影响电感值和 Q值及谐振频率的各参数进行全面详尽的模拟,得出了几条实用的设计原则且用此模拟方法与所得结论均可有效地指导射频集成电路中集成电感的设计。Based on analysis of the model of integrated inductors on silicon, geometrical parameters, process parameters, and the form of multi-layer are discussed. The simulations of parameters to affect inductor Q and Fres are done by a good performance simulator (ASITIC), simulation results and their analysis are presented and principles about the design of spiral inductors on silicon are given. The way and conclusion can be used in the design of integrated inductor in RF.

关 键 词：平面螺旋电感 电感模型 品质因数 几何参数 工艺参数 ASITIC 

分 类 号：TN405[电子电信—微电子学与固体电子学]