一种BiCMOS低压差线性稳压器的设计  

The Design of a BiCMOS Low-Dropout Voltage Regulator

作　　者：巩怀青[1] 常昌远[1] 

机构地区：[1]东南大学微电子中心,南京210096

出　　处：《电子器件》2005年第1期142-145,共4页Chinese Journal of Electron Devices

摘　　要：设计了一种低压差线性稳压器,对其结构原理进行了分析,并用0.6 μm BiCMOS工艺进行模拟验证.Hspice模拟结果表明在输出负载电流为150 mA,温度为25 ℃,输入电压为4.3 V时压差为120 mV,输出噪声74.2 μVRMS,静态电流只有15.43 μA,而待机工作模式静态电流小于0.04 μA.体现其具有低功耗、低噪声的优点,且该稳压器可工作在3.45～10 V电源电压范围,并有过温保护和限流保护功能.The paper proposed a Low-Dropout Voltage Regulator. The structure and principles were analyzed and simulated using (0.6 μm) BiCMOS process .The Hspice simulation results show that the typical dropout is (120 mV), and the typical quiescent current is only (15.43 μA),but quiescent current is less than (0.04 μA) in standby mode, typical output noise is (74.2 μV_(RMS)) at (150 mA) and 25℃,which imply it has a advantage of low power dissipation and low noise. the regulator has a wide range of power supply from (3.45 V) to (10 V) and functions of internal current limiting and thermal protection.

关 键 词：低压差 低功耗 线性调整率 负载调整率 

分 类 号：TN402[电子电信—微电子学与固体电子学]