纳米ZnO掺杂压敏电阻电位梯度与显微组织研究  

Effect of Nano ZnO Doping on Voltage and Microstructure of Varistor

作　　者：严群[1] 陈家钊[1] 涂铭旌[1] 

机构地区：[1]四川大学材料科学与工程学院,四川成都610065

出　　处：《压电与声光》2005年第2期172-174,共3页Piezoelectrics & Acoustooptics

摘　　要：在制备ZnO压敏电阻的原料中加入纳米级ZnO粉料,研究了纳米级粉料对ZnO压敏电阻的压敏电位梯度的影响,并对其微观组织进行了分析研究,从理论上探讨了纳米ZnO影响ZnO压敏电阻压敏电位梯度与组织的机理。研究结果表明,压敏电阻中加入纳米ZnO后,其压敏电位梯度显著提高,纳米ZnO(质量分数)在0～30%的成分范围内,随着纳米ZnO含量的增加,ZnO压敏电阻的压敏电位梯度明显提高。其原因是纳米ZnO加入到ZnO压敏电阻中,使晶粒尺寸减小所致。Nano ZnO doping powder was added into varistor materials. The effect of nano ZnO on voltage and microstructure of varistor was studied, and the mechanism of the effect was made from view of theoretical analysis.The results show that nano ZnO improve the voltage of the varistor evidently, and the voltage of varistor increases with the content of nano ZnO in the range of 0～30%. The microstructure analysis indicates that the nano additive reduces the size of ZnO grain, which leads to the evident improvement of the voltage of varistor.

关 键 词：压敏电阻 纳米ZnO压敏电位梯度 显微组织 

分 类 号：TM283[一般工业技术—材料科学与工程]