氖等电子序列2p^5nl（l＝s，d）系列的高激发态结构  

THE HIGHLY-EXCITED STATE STRUCTURE OF 2p￣5nl(l=s,d) RYDBERG SERIES FOR THE NEON ISOELECTRONIC SEQUENCE

作　　者：钱兴中[1] 王治文[1] 

机构地区：[1]吉林大学原子与分子物理研究所,郑州解放军电子技术学院

出　　处：《原子与分子物理学报》1994年第3期263-270,共8页Journal of Atomic and Molecular Physics

摘　　要：本文用本征通道量子亏损理论方法（ＥＱＤＴ方法）计算了氖等电子序列２ｐ５ｎｌ（ｌ＝ｓ，ｄ）系列的高激发态结构。得到基本结构参量（ＥＱＤＴ参量）随净电荷数Ｚｃ增大的变化规律，并从静电相互作用与自旋－轨道相互作用之间的竞争角度给出确切的物理解释。以ＮｅＩ为实例，给出其高激发态结构的具体数值结果。In this paper, by using the eigenchannel quantum defect theory (EQDT) we calculate the hishly -excited state structure of 2p5nl (l=s, d) Rydberg series for the neon isoelectronic sequence. We obtain the basic structure parameters(EQDT parameters) as functions of the effective nuclear charge. Their behaviours can be interpreted in terms of the competition between electrostate and spin - orbit interactions along the sequence. As a numeriCal example, we give the highly-excited structure of 2p5nl(l=s,d) Rydberg series for the neon atom.

关 键 词：氖 等电子序列 高激发态 量子亏损 

分 类 号：O562.4[理学—原子与分子物理]