磁控溅射Ni-Mn-Ga磁驱动记忆薄膜的组织结构与成分研究  

Microstructure and composition of Ni-Mn-Ga magnetically driven thin film prepared by magnetron sputtering deposition

作　　者：刘超[1] 吴冶[1] 蔡伟[1] 赵连城[1] 

机构地区：[1]哈尔滨工业大学材料科学与工程学院,黑龙江哈尔滨150001

出　　处：《功能材料》2005年第4期543-545,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50371022)

摘　　要：利用射频磁控溅射技术成功地在Si衬底上沉积Ni Mn Ga 薄膜,并采用XRD、SEM、AFM 及EMPA系统研究Ni Mn Ga薄膜的晶体学结构、断面形貌、表面形貌、成分及其影响规律。结果表明,经823K退火1h Ni Mn Ga薄膜完全晶化,室温下呈L21型体心立方结构;断面形貌揭示Ni Mn Ga 薄膜呈柱状结构。Ni Mn Ga薄膜的表面粗糙度随溅射功率和溅射时间的增加而增大;Ni Mn Ga薄膜中Ga的含量受溅射功率影响较大, Ni 的含量受溅射时间影响较大。Ni-Mn-Ga thin films have been successfully deposited onto Si-(100) substrates using magnetron sputtering method. Crystallographic structure, cross-sectional microstructure, surface morphology and compositions of Ni-Mn-Ga thin films have been systematically investigated by means of XRD, SEM, AFM and EMPA. It was shown that the as-deposited thin films annealed at 823 K for 1 h were fully crystallized with L21 body-central cubic structure at room temperature. SEM and AFM analysis reveal that Ni-Mn-Ga thin films have a well-defined columnar structure, moreover, surface roughness of Ni-Mn-Ga thin films increases with the sputtering power and sputtering time increasing. The composition of Ni-Mn-Ga thin films was closely related with deposition parameters. The content of Ga in the Ni-Mn-Ga thin films is seriously affected by the sputtering power, whereas the content of Ni in the Ni-Mn-Ga was remarkably influenced by the sputtering time.

关 键 词：Ni—Mn—Ga 形状记忆 磁驱动 薄膜 

分 类 号：TG111.92[金属学及工艺—物理冶金]