电子轰击下Ag_(1-β)(TCNQ)薄膜的相变  

PHASE TRANSITION OF Ag_(1-β)(TCNQ) FILMS UNDER ELECTRON BOMBARDMENT

作　　者：诸葛健[1] 潘星龙[1] 陈国荣[1] 华中一[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》1994年第5期317-319,共3页Vacuum Science and Technology

摘　　要：在类似于光导摄像管的真空器件中，用Ag1－β（TCNQ）薄膜置换光敏靶，原则上可以做成用电子束写入和读出的高密度存贮器，它的寻址可以用磁偏转或静电偏转系统。本文用实验方法确定了电子束的写入条件，进一步证明这种设想的合理性和可行性。A vacuum electron device,similar to a vidicon but the photosensitive target is replaced by an Ag1-β(TCNQ) film,was expected to be used as a high-density memory having the performances of 'write-in'and 'read-out'by electron bombardment. The addressing can be realized by a magnetic or electrostatic deflection system. In this paper the'write-in 'conditions of the electron beam used have been determined by experimental methods. The original consideration was further proved to be reasonable and practicable.

关 键 词：电子束管 存贮器 银 TCNQ 

分 类 号：O484.4[理学—固体物理] TN305.7[理学—物理]