1.55μm Laser Diode Monolithically Integrated with Spot-Size Converter Using Conventional Process   

使用传统工艺实现1.55μm激光器与模斑转换器的单片集成(英文)

作　　者：侯廉平[1] 王圩[1] 朱洪亮[1] 

机构地区：[1]中国科学院半导体研究所光电子研究中心,北京100083

出　　处：《Journal of Semiconductors》2005年第3期443-447,共5页半导体学报（英文版）

基　　金：国家自然科学基金重大研究计划(批准号:90101023);国家重点基础研究发展计划(批准号:20000683 1)资助项目~~

摘　　要：A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching process.For the laser diode,a ridge double core structure is employed.For the spot size converter,a buried ridge double core structure is incorporated.The laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of mode.The laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/A.The beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).采用传统的光刻和湿法腐蚀工艺制作了1 55μm波长的新型半导体激光器和模斑转换器的单片集成器件.其中激光器采用脊型双波导,模斑转换器采用掩埋双波导结构,水平楔型的有源波导和宽而薄的无源波导同时控制光斑模式大小.实验测得器件的阈值电流为40mA,斜率效率为0 35W/A,水平和垂直方向的远场发散角分别为14 89°和18 18°,与单模光纤的耦合损耗为3dB.

关 键 词：laser diode spot  size converters integrated optoelectronics optical coupling 

分 类 号：TN248.4[电子电信—物理电子学]