亚100nm体硅MOSFET集约I-V模型  

Compact I-V Model for Sub-100nm Bulk Silicon MOSFETs 

作　　者：张大伟[1] 章浩[2] 朱广平[1] 张雪莲[1] 田立林[1] 余志平[1] 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]清华大学电子工程系,北京100084

出　　处：《Journal of Semiconductors》2005年第3期554-561,共8页半导体学报（英文版）

基　　金：国家高技术研究发展计划资助项目(批准号:2003AA1Z1370)~~

摘　　要：利用“局域化”的概念和二维泊松方程的解析解,建立了沟道方向上二维量子效应对阈电压的修正模型.基于密度梯度理论,建立了多晶硅栅内量子效应对阈电压的修正模型.在此基础上,结合弹道理论,开发了一个适用于亚100nm MOSFET的集约I V模型.通过与 TSMC提供的沟长为 45nm实际器件测试结果[1],以及与三组亚100nm MOSFET的数值模拟结果的比较,证明了该模型具有良好的精度(平均误差小于8%)和可延伸性.Analytical models for the correction to the threshold voltage,due to the two dimensional (2D) quantum mechanical (QM) effects in the transport direction and the QM effects in the poly silicon gate (poly gate) region,are established respectively based on the theory of “locality” and the analytical solution to the 2D Poisson equation and on the density gradient model.These corrections are then combined with the ballistic transport theory to establish a compact I V model for sub 100nm MOSFETs.This compact model renders satisfactory results (standard relative error less than 8%) compared to the experimental data of a 45nm channel manufactured device provided by TSMC and the numerical results of three sets of sub 100nm MOSFETs,which prove its accuracy and scalability.

关 键 词：量子力学效应 弹道输运 体硅MOSFET 集约I-V模型 可延伸性 

分 类 号：TN304.02[电子电信—物理电子学]