Study on resonance frequency distribution of high-overtone bulk acoustic resonators  

作　　者：ZHANGHui WANGZuoqing ZHANGShuyi 

机构地区：[1]LabofModernAcoustics,InstituteofAcoustics,NanjingUniversityNanjing210093

出　　处：《Chinese Journal of Acoustics》2005年第2期146-154,共9页声学学报（英文版）

基　　金：ThisworkwassupportedbytheNationalNaturalScienceFoundationofChina(10374051).

摘　　要：Based on the method of characterizing piezo-films by the resonance frequency distributions, the factors influencing the resonance frequency distribution of a High-overtone Bulk Acoustic Resonator (HBAR) consisting of a piezoelectric thin film with two electrodes and a substrate are studied. Some HBARs are simulated. The results manifest that changing the acoustic impedance ratio of the substrate to piezo-film the distribution of the space of the parallel resonance frequency and the effective electromechanical coupling factor are changed. When the fundamental mode of the piezo-film is at high frequency, changing the acoustic impedance ratio of the electrode to piezo-film and the thickness of the electrodes make the resonance frequency distribution of HBARs change. These results manifest that the HBARs can be resonant at specified frequencies by means of adjusting the factors affecting the resonance frequency distribution.Based on the method of characterizing piezo-films by the resonance frequency distributions, the factors influencing the resonance frequency distribution of a High-overtone Bulk Acoustic Resonator (HBAR) consisting of a piezoelectric thin film with two electrodes and a substrate are studied. Some HBARs are simulated. The results manifest that changing the acoustic impedance ratio of the substrate to piezo-film the distribution of the space of the parallel resonance frequency and the effective electromechanical coupling factor are changed. When the fundamental mode of the piezo-film is at high frequency, changing the acoustic impedance ratio of the electrode to piezo-film and the thickness of the electrodes make the resonance frequency distribution of HBARs change. These results manifest that the HBARs can be resonant at specified frequencies by means of adjusting the factors affecting the resonance frequency distribution.

分 类 号：O422.6[理学—声学] TB53[理学—物理]