Al_2O_3陶瓷上金刚石膜生长工艺优化及α粒子响应  

Optimization for Growth of CVD Diamond on Al_2O_3 and Response to Alpha Particle Irradiation

作　　者：楼燕燕[1] 王林军[1] 张明龙[1] 顾蓓蓓[1] 苏青峰[1] 夏义本[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《Journal of Semiconductors》2005年第4期740-744,共5页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60277024);上海市青年科技启明星(批准号:02QE14018);上海应用材料研究与发展基金(批准号:0307)资助项目~~

摘　　要：采用微波等离子体化学气相沉积(MPCVD)法在氧化铝陶瓷衬底上沉积金刚石膜,并制作梳状电极的α粒子探测器.通过优化薄膜生长条件,发现酒精浓度为0.8%、沉积温度为850℃时,金刚石薄膜的介电常数最接近单晶金刚石膜,X射线衍射、喇曼光谱及扫描电子显微镜测试表明金刚石膜的质量较好.探测器的I V测试结果表明暗电流在10-8～10-7A之间,α粒子(241Am5.5MeV)辐照下电流为10-5～10-4A.A diamond film is grown on alumina ceramic by micro-wave plasma chemical vapor deposition (MPCVD) method and is fabricated into an interdigited alpha-particle detector.By optimizing growth parameters in MPCVD,we find that under the conditions with 0.8% in carbon source (alcohol/hydrogen) concentration and 850℃ at deposition temperature,the best quality of diamond film can be obtained.X-ray diffraction,Raman spectroscopy,scan electron microscopy are utilized to monitor the quality of diamond film.Photocurrent under α-particle irradiation is in the range of 10 -5～10 -4A within 100V,and dark current is about 10 -8～10 -7A.

关 键 词：粒子探测器 金刚石 介电系数 氧化铝 

分 类 号：TB43[一般工业技术]