自旋极化电子源装置研究  

a Simplified GaAs Polarized Electron Source

作　　者：邓玲娜[1] 刘义保[1] 何为民[1] 

机构地区：[1]东华理工学院物理系,抚州344000

出　　处：《科技广场》2005年第2期100-102,共3页Science Mosaic

摘　　要：自旋极化电子在许多研究领域有着广泛用途,目前国际上普遍采用光电离GaAs晶体产生自旋极化电子。本文介绍自旋极化电子产生的原理及一种设计简洁、结构简单的极化电子源装置。该十字型四通道装置内有一非常简单的900静电偏转器,新型的用于固定晶片的弹簧夹子可保证晶片加热均匀。用波长780nm圆偏振激光激活GaAs光电阴极可以产生极化电子,然后通过900静电偏转器及一组静电透镜将极化电子引到反应区。The use of polarized electrons has become widespread in many areas of research .To produce polarized electrons , a method based on photoemission from GaAs crystal is used. The principle of GaAs photoemission polarized electrons and a very simple kind of GaAs polarized electron source are introduced in this paper. The source chamber is conflated four-way cross , a very simple tubular 900 electrostatic deflector and a new spring-clamp GaAs crystal mounting design to provide uniform crystal heating . The GaAs photocathode must be activated by a weavelength 780nm circle polarized laser to produce a transversely polarized electron beam which are transferred to the target point through a group of electrostatic lenses.

关 键 词：极化电子源 装置 自旋极化电子 静电偏转器 GAAS晶体 研究领域 加热均匀 光电阴极 偏振激光 静电透镜 900 光电离 四通道 十字型 反应区 晶片 波长 

分 类 号：TN305.7[电子电信—物理电子学] TM15[电气工程—电工理论与新技术]