压制压力对Si-Al电子封装材料性能的影响  

Effect of Pressing Pressure on Properties of Si-Al Electronic Packaging Materials

作　　者：冯曦[1] 杨迎新[2] 郑子樵[1] 李世晨[1] 杨培勇[1] 

机构地区：[1]中南大学材料科学与工程学院,湖南长沙410083 [2]江西理工大学南昌分校机电系,江西南昌330013

出　　处：《中南大学学报（自然科学版）》2005年第2期198-203,共6页Journal of Central South University:Science and Technology

基　　金：国防科工委民口配套项目(MKPT 04 107)

摘　　要：采用粉末冶金液相烧结工艺制备Si 50Al电子封装材料,研究了压制压力对材料性能的影响。研究结果表明:增大压制压力可提高材料致密度,有效地促进界面的反应结合,使材料热导率提高;但当压制压力过大时,由于Si颗粒发生开裂甚至解理,界面热阻急剧上升,导致热导率下降;高压制压力导致Si Al体系在945 ℃附近出现1个放热过程,这个放热过程对应于该温度下氧化铝薄膜的破裂以及随后Al与Si颗粒表层SiO2 的界面反应;诱发Al 和SiO2 反应的是高压制压力所造成的界面处储能,这使体系润湿性大幅度提高,改善了材料的热导性能。Si-50%Al electronic packaging materials were fabricated by liquid phase sintering. The effects of pressing pressure on the microstructure and properties of the materials were investigated. The results show that thermal conductivity of the composites increases with pressing pressure as a result of improvements of densities and interface bonding, but a very high pressure can lead to many microcracks in Si particles, and then reduce thermal conductivities. An exothermic progress exists in Si/Al system under high pressing pressure at about 945°C. It mainly indicates the interface reaction between Al and silicon dioxide after the fracture of aluminum oxide film, which is encouraged by the boundary defect energy caused by high pressing pressure. Exothermic reaction improves the wettability of this system.

关 键 词：Si—Al电子封装材料 液相烧结 压制压力 热导率 

分 类 号：TF124.5[冶金工程—粉末冶金]