FeCuNbCrSiB薄膜的制备及其巨磁阻抗效应研究  

Study on Preparation and Giant Magneto-impedance Effect of FeCuNbCrSiB Thin Film

作　　者：张亚民[1] 陈吉安[1] 周勇[1] 丁文[1] 王明军[1] 高孝裕[1] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细技术教育部重点实验室,上海200030

出　　处：《电子元件与材料》2005年第5期8-10,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50275096);上海市纳米专项(0215nm104;0352nm014)

摘　　要：采用磁控溅射方法,在玻璃基片上制备了非晶的Fe73.5Cu1Nb3Cr0.5Si13B9薄膜及三明治结构M/C/M(M为Fe73.5Cu1Nb3Cr0.5Si13B9;C为Cu)的多层膜.在频率(1～40)MHz下,研究了薄膜材料的巨磁阻抗(GMI)效应随外加磁场的变化关系.结果表明:单层膜的GMI效应较小,只有4.4%;而三明治结构多层膜的GMI效应,比单层膜有较大幅度的提高,在5MHz、120Oe下,纵向和横向GMI效应分别达-17.4%和-20.7%.薄膜材料的纵向GMI效应随外加磁场变化呈现先增后减,而横向GMI效应随外加磁场的增加而单调递减,其变化规律与薄膜的易轴取向有很大关系.Amorphous Fe73.5Cu1Nb3Cr0.5Si13B9 thin film were prepared by sputtering method onto glass substrate, the giant magneto-impedance (GMI) effect has been investigated in single layer Fe73.5Cu1Nb3Cr0.5Si13B9 film and sandwiched Fe73.5Cu1Nb3Cr0.5Si13B9/Cu/ Fe73.5Cu1Nb3Cr0.5Si13B9 films in the frequency range of (1~40) MHz. The results show that the GMI effect is low in single layer Fe73.5Cu1Nb3Cr0.5Si13B9 film; while, the GMI effect in sandwiched films are greatly improved, and the GMI values of –17.4% and –20.7% are obtained for a frequency of 5 MHz at a magnetic field of 120 Oe with magnetic field applied along the longitudinal and transverse direction, respectively. The longitudinal GMI effect increases with applied magnetic field, reaching a maximum at a field of near the anisotropy field; however, the transverse GMI effect decreases with the increase of the magnetic field. The value of GMI effect is correlated to the easy axis direction.

关 键 词：电子技术 巨磁阻抗效应 FeCuNbCrSiB薄膜 三明治薄膜 

分 类 号：O484[理学—固体物理] O441[理学—物理]