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作 者:SHANXiao-nan LUGuo-guang HEChun-feng SUNYan-fang LITe QINLi NINGYong-qiang WANGLi-jun
机构地区:[1]GraduateSchoolofChineseAcademyofSciences,Beijing100039,China//LabofExcitedStatesProcesses,ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun,130033,China [2]LabofExcitedStatesProcesses,ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun,130033,China [4]LabofExcitedStatesProcesses,ChangchunInstituteofOptics,FineMechanicsandPhysics,ChineseAcademyofSciences,Changchun,130033,China
出 处:《光机电信息》2005年第4期9-16,共8页OME Information
摘 要:Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking.Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking.
分 类 号:TN248.4[电子电信—物理电子学]
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