MBE生长高2-DEG面密度InP基PHEMT外延材料  

MBE Growth of High 2-DEG Sheet Density InP Based PHEMT Epitaxial Materials

作　　者：徐静波[1] 杨瑞霞[1] 武一宾[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2005年第5期28-31,共4页Semiconductor Technology

基　　金：国家预研基金资助项目(51432020103QT4501);河北省自然科学基金资助项目(F2004000078);天津市自然科学基金资助项目(203801411)

摘　　要：利用MBE技术生长了InP基InAlAs/InGaAs PHEMT结构,使用原子力显微镜(AFM)、霍耳测试系统研究了影响二维电子气(2-DEG)面密度和电子迁移率的因素,着重分析了隔离层厚度、沟道层In组分的影响。在保持较高迁移率的基础上,生长出了高μn×ns的InP PHEMT外延材料。InP-based InAlAs/InGaAs PHEMT structure was grown by MBE technology and thefactors affecting the sheet density of the 2-DEG and the electron mobility were studied by AFM andHall test system, the emphasis was put on the effects of the spacer width and In composition in thechannel layer on the density and the electron mobility of the 2-DEG. Finally, the InAlAs/InGaAsstructure with a high μn×ns was obtained.

关 键 词：MBE 外延材料 电子迁移率 2-DEG面密度 

分 类 号：TN304.054[电子电信—物理电子学]