电热激励硅谐振器件的研究  

Electro-thermal Excited Si Resonant Devices

作　　者：李炳乾[1] 

机构地区：[1]佛山科技学院物理系,广东佛山528000

出　　处：《半导体光电》2005年第2期105-107,共3页Semiconductor Optoelectronics

摘　　要：设计了悬臂梁结构电热激励、压阻拾取硅微机械谐振器件,分析了电热激励和压阻拾取的基本工作原理,设计了与Bipolar工艺兼容的器件制作工艺流程,并制作了器件样品。对真空中器件的幅频特性进行了实验研究,研究结果表明,在粗真空范围内,保持激励功率不变的情况下,微悬臂梁的振幅、谐振频率与真空度之间具有明显的依赖关系,可以用来设计、制作MEMS粗真空谐振式传感器。The structure and bipolar compatible process for Si micro-cantilever resonant devices are designed and demonstrated. The principles of electro-thermal excited and piezoresistive measurement pick-up are analyzed. The amplitude-frequency characteristics of Si micro-cantilever are studied experimentally. The experimental results show that there is obvious dependence between vacuum and the amplitude-frequency characteristics, whose dependence could be used to demonstrate a vacuum gauge based on micro-cantilever resonant devices.

关 键 词：电热激励 微悬臂梁 谐振器件 

分 类 号：TN402[电子电信—微电子学与固体电子学]