FTIR研究快中子辐照直拉硅中的VO_2  

FTIR study an VO_2 defect in fast neutron irradiated Czochralski silicon

作　　者：杨帅[1] 李养贤[1] 马巧云[1] 徐学文[1] 牛萍娟[2] 李永章[3] 牛胜利[3] 李洪涛[3] 

机构地区：[1]河北工业大学材料科学与工程学院,天津300130 [2]天津工业大学信息与通信学院,天津300160 [3]中国原子能科学研究院,北京102413

出　　处：《物理学报》2005年第5期2256-2260,共5页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :5 0 0 3 2 0 10 ;5 0 472 0 3 4);河北省自然科学基金重点项目 (批准号 :60 10 47;E2 0 0 5 0 0 0 0 48)资助的课题 .~~

摘　　要：快中子辐照直拉硅 (CZ Si)经 4 0 0— 4 5 0℃热处理后 ,空位_双氧复合体 (VO2 )是其主要的缺陷 .在 30 0— 5 0 0℃热处理快中子辐照的CZ_Si后 ,IR光谱中有 919.6cm- 1 和 10 0 6cm- 1 两个吸收峰伴随VO2 (889cm- 1 )出现 ,这两个IR吸收峰是VO2 的一种亚稳态缺陷 (O V O)引起的 ,此缺陷态是由一个VO(A中心 )与次临近的一个间隙氧原子 (Oi)相互作用所形成的 .在 30 0℃延长退火时间或升高退火温度 ,都会使 (O V O)转变为稳态VO2 .辐照剂量在 10 1 9数量级 ,经 4 0 0— 4 5 0℃热处理所形成的缺陷主要为多空位型 ,而VO2 被抑制 .The vacancy-dioxygen complex(VO2) is one of the main defects formed in fast neutron irradiated CZ-Si during annealing in the temperature range 400-500° C. In this defect, two oxygen atoms share a vacancy, each of which is bonded to two silicon neighbors. With the increase of the 889cm(-1) (VO2), two infrared absorption bands at 919.6 and 1006cm(-1) will arise in neutron irradiated CZ-Si after annealed in the temperature range 300-500° C. IR vibrational bands at 919.6 and 1006cm(-1) can be assigned to the metastable defect (O-V-O) that is composeq of a VO (A center) and a neighboring interstitial oxygen(O-i) atom. By prolonging the annealing time from 2 It up to 10 h or increasing the annealing temperature, the metastable defect (O-V-O) will be converted into VO2. During annealing in the temperature range 400-500° C, the main defects formed in the high dose(10(19)) neutron irradiated CZ-Si is the multi-vacancy type of defects and the formation of the VO2 will be depressed.

关 键 词：快中子辐照 直拉硅 二氧化钒 亚稳态缺陷 

分 类 号：O571.5[理学—粒子物理与原子核物理]