Characterization of ZnO Based Varistor Derived from Nano ZnO Powders and Ultrafine Dopants  

Characterization of ZnO Based Varistor Derived from Nano ZnO Powders and Ultrafine Dopants

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作  者:Weizhong YANG, Dali ZHOU, Guangfu YIN, Runsheng WANG and Yun ZHANG College of Material Science and Engineering, Sichuan University, Chengdu 610064, China 

出  处:《Journal of Materials Science & Technology》2005年第2期183-186,共4页材料科学技术(英文版)

摘  要:Nanosized ZnO powders were prepared with a two-step precipitation method. The average size of ZnO particles was about 80 nm and their size distribution was narrow. Combining with ultrafine additive powders, ZnO base varistor was produced via an oxide mixing route. ZnO varistor derived from normal reagent grade starting materials was investigated for comparison purpose. Outstanding microstructure of the ZnO varistor derived from nanosize ZnO powders and ultrafine dopants was obtained: uniform distribution of fine ZnO grains (less than 3 microns), grain boundary and the dopant position. Higher varistor voltage (U=492 V/mm) and nonlinear coefficient (α=56.2) as well as lower leakage current (TL=1.5 μuA) were achieved. The better electrical properties were attributed to the uniform microstructure, which in turn led to stable and uniform potential barriers. Also this improved technique is more feasible for producing ZnO nanopowders and resulting varistor in large scales.Nanosized ZnO powders were prepared with a two-step precipitation method. The average size of ZnO particles was about 80 nm and their size distribution was narrow. Combining with ultrafine additive powders, ZnO base varistor was produced via an oxide mixing route. ZnO varistor derived from normal reagent grade starting materials was investigated for comparison purpose. Outstanding microstructure of the ZnO varistor derived from nanosize ZnO powders and ultrafine dopants was obtained: uniform distribution of fine ZnO grains (less than 3 microns), grain boundary and the dopant position. Higher varistor voltage (U=492 V/mm) and nonlinear coefficient (α=56.2) as well as lower leakage current (TL=1.5 μuA) were achieved. The better electrical properties were attributed to the uniform microstructure, which in turn led to stable and uniform potential barriers. Also this improved technique is more feasible for producing ZnO nanopowders and resulting varistor in large scales.

关 键 词:Zinc oxide (ZnO) VARISTOR NANOPOWDERS Ultrafine dopants Two-step precipitation 

分 类 号:TB383[一般工业技术—材料科学与工程]

 

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