熔渗反应法制备MoSi_(2-)SiC复合材料性能的影响因素  

Influence Factor of MoSi_(2-)SiC Composites Synthesised by Reactive Infiltration Processing

作　　者：张小立[1] 吕振林[2] 金志浩[1] 

机构地区：[1]西安交通大学材料学院金属材料强度国家重点实验室,陕西西安710049 [2]西安理工大学材料学院,陕西西安710048

出　　处：《稀有金属材料与工程》2005年第4期639-642,共4页Rare Metal Materials and Engineering

摘　　要：用熔渗反应无压烧结技术制备了MoSi2_-SiC复合材料,对制备过程的影响因素进行了分析。研究结果表明:在渗硅温度为1450℃时,反应生成颗粒细小、弥散分布的SiC相,从而使得材料具有较高的抗弯强度;当渗硅温度升高至1750℃时,生成的SiC相发生再结晶长大,使得材料强度下降。成型压力对熔渗硅样品强度影响不大。MoSi2_-SiC复合材料的抗弯强度随SiC相含量的增加在增强相含量为40%时存在一极大值,这是由于当SiC数量超过40%后,SiC粒子的团聚、长大使弥散强化作用降低,从而使材料的断裂强度降低;复合材料电阻率随第二相含量的增加而增加。MoSi2-SiC composite was prepared using reactive infiltration processing, and the corresponding factor of synthesis was analyzed. The results showed that when infiltration temperature was 1450°, the formed SiC phase was with fine grain size and dispersed in the matrix, and therefore the product owned high bending strength; while raising infiltration temperature to 1750° C, the formed SiC phase was recrystallized and grown up, and therefore led to the low bending strength of the product. The forming pressure has no obvious effect on the bending strength of the composite. There was a maximum bending strength of product when the content of SiC reached 40%. after this content exceeded 40% the bending strength decreased because of the agglomerate occurring of SiC phase. The electrical resistivity of the as-product increased with the increasing of the content of the second phase.

关 键 词：MOSI2-SIC复合材料 抗弯强度 电阻率 熔渗温度 成型压力 

分 类 号：TB332[一般工业技术—材料科学与工程]