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机构地区:[1]中国科学院上海硅酸盐研究所,上海200050
出 处:《人工晶体学报》2005年第2期224-228,共5页Journal of Synthetic Crystals
基 金:中国科学院创新前沿项目(SCX20040016)资助
摘 要:采用坩埚下降法以及坩埚密封技术,成功生长了直径50mm的新型压电晶体Sr3Ga2Ge4O14.测试了晶体的晶格常数、热膨胀系数、密度、硬度和透过光谱等基本物理性能.测试结果表明:晶体热膨胀系数明显小于石英晶体,而且α11和α33相对比较接近,有利于该晶体用作声表面波用基片材料.在250~2500nm波段范围内,其透过率均大于80%,优于相同结构的La3Ga5SiO14晶体,是一种潜在的激光基质晶体材料.A new piezoelectric single crystal Sr3Ga2Ge4O14 (SGG) has been successfully grown by the vertical Bridgman method with crucible-sealing technique. SGG crystal up to 50 mm in diameter has been obtained. The basic physical properties of SGG crystals such as lattice parameters, thermal expansion coefficients, density, hardness and optical transmittance were measured. The thermal expansion coefficients of SGG crystal are smaller than those of α-quartz crystals, and α11 and α11 are very close, which is beneficial to SAW applications. The optical transmission of SGG crystals is above 80% in the range of 250-2500 nm, which is higher than that of La3Ga5SiO14 crystal and has a potential application as a laser host material.
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