千瓦级连续激光二极管面阵及微沟道冷却组件  

1000W Continuous Laser Diode Planar Array and the Silicon Micro-Channel Cooling Module

作　　者：戴特力[1] 梁一平[1] 罗於静[1] 

机构地区：[1]重庆师范大学物理学与信息技术学院,重庆400047

出　　处：《中国激光》2005年第5期585-589,共5页Chinese Journal of Lasers

基　　金：重庆市科委攻关项目资助

摘　　要：千瓦级连续激光二极管面阵由30个40W的808nm连续激光二极管条组成,按要求排列成5×6矩阵,发光孔径12mm×70mm。每个激光二极管条安装在微沟道冷却封装组件上,依靠高压冷却水通过微沟道维持连续运行。面阵的30个二极管条的电路串联,冷却水道并联,恒流电流50A时,发射连续1060W,808nm波长的激光,平均功率密度126W/cm2。5个K型热电偶安装在面阵不同位置测量激光二极管底部附近硅热沉的温度随耗散热功率的增加,面阵整体热阻的测量值为0.009℃/W。千瓦级连续面阵可用于抽运大功率固体激光器,也可用于材料表面热处理。The 1000 W continuous laser diode planar array is made up of 30 diode bars at the wavelength of 808 nm with each power of 40 W and forms a rectangle luminescence aperture of 12 mm × 70 mm. These bars were mounted on modular microchannel cooled headsinks (MCC) and can continuously emit the laser by the coolant passing through MCC under 0.5 MPa pressure. The total continuous power is 1060 W and the average power density is 126 W/cm2 at wavelength of 808 nm when the current is fixed 50 A. Five uniformity K-type thermoelectric couples are placed on the different five silicon headsinks of the planar array and used to measure the temperature increase with the loss thermal power. The measuring result of thermal impedance of the planar array is about 0.009 °C/W.

关 键 词：激光技术 大功率连续激光二极管面阵 硅微沟道冷却封装组件 热阻系数 

分 类 号：TN248.4[电子电信—物理电子学]