Threshold Current Characteristics of Intracavity-contacted Vertical-cavity Surface-emitting Laser  

作　　者：QUHong-wei GUOXia DONGLi-min DENGJun LIANPeng ZHOUDe-shu SHENGuang-Di 

机构地区：[1]BeijingLab.ofOptoelectron.Technol.SchoolofElectron.Inform.＆ControlEng.,BeijingUniversityofTechnology,Beijing100022,CHN

出　　处：《Semiconductor Photonics and Technology》2005年第2期81-84,共4页半导体光子学与技术（英文版）

基　　金：National Natural Science Foundation of China ( 60276033 ); National High Technology Research and Development Program of china(2002AA312070); National Key Basic Research Plan of china(G20000683-02); Beijing Natural Science Foundation of China

摘　　要：Threshold current characteristics of intracavity-contacted oxide-confinedvertical-cavity surface-emitting laser had been investigated in detail. Threshold currentcharacteristics not only were depended on the size of oxide-aperture, but also were also stronglyaffected by the mismatch of its lasing mode and gain peak. For the same degree detuning of the gainpeak and lasing mode at room temperature, the threshold current was approximately proportional tothe square of the oxide-aperture diameter of above 5 μm. For the same oxide-aperture device, thelarger the detuning degree of the lasing mode shifted to the shorter wavelength of the gain peak atroom temperature was, the lower the minimum threshold current was. The wavelengths of the lasingmode and gain peak were ± N X 10 nm detuning at 300 K, The temperature of the minimum thresholdcurrent was changed to be about ± N X 40 K(N real number). The calculated results were consistentwith the experimental ones.Threshold current characteristics of intracavity-contacted oxide-confined vertical-cavity surface-emitting laser had been investigated in detail. Threshold current characteristics not only were depended on the size of oxide-aperture, but also were also strongly affected by the mismatch of its lasing mode and gain peak. For the same degree detuning of the gain peak and lasing mode at room temperature, the threshold current was approximately proportional to the square of the oxide-aperture diameter of above 5μm. For the same oxide-aperture device, the larger the detuning degree of the lasing mode shifted to the shorter wavelength of the gain peak at room temperature was, the lower the minimum threshold current was. The wavelengths of the lasing mode and gain peak were ±N×10nm detuning at 300K, The temperature of the minimum threshold current was changed to be about ±N×40K(N real number). The calculated results were consistent with the experimental ones.

关 键 词：VCSEL threshold current gain peak lasing mode TEMPERATURE 

分 类 号：TN248.4[电子电信—物理电子学]