倒装大功率白光LED热场分析与测试  

Study on Thermal Performances of Flip-chip High-power White LEDs

作　　者：吴慧颖[1] 钱可元[1] 胡飞[1] 罗毅[1] 

机构地区：[1]清华大学深圳研究生院半导体照明实验室,广东深圳518055

出　　处：《光电子．激光》2005年第5期511-514,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(60290084;60244001;60223001);国家"863"计划资助项目(2001AA312190;2002AA31119Z);国家"973"计划资助项目(G2000 03 6601)

摘　　要：散热是影响大功率LED正常工作及器件寿命的关键因素,本文利用有限元法(FEM)对W级倒装大功率白光LED的空间温度场分布进行了模拟计算,结果与用自制的测试装置测量的温度分布相吻合。在此基础上,保持电流密度不变,研究芯片尺寸与结区温度的关系,计算出在当前的发光效率和封装结构条件下,由于散热条件的限制,芯片能承受的最大功率和能达到的最大尺寸。Heat dissipation is a key issue in the application of high-power LEDs, as it has significant influence on the output power and lifetime of the device. In this work, finite element method (FEM) is adopted to determine the temperature distribution in 1 W high-power white LEDs. The simulation results show good agreement with the experimental data. The thermal limit of the available package is also studied. The influence of chip-size on the junction temperature has been studied. The maximum input power and chip-size under certain design requirement are also given. This method offers great ease in estimating the temperature distribution and thermal limits of the package.

关 键 词：白光LED 倒装 场分析 温度场分布 器件寿命 模拟计算 有限元法 温度分布 测试装置 电流密度 结构条件 发光效率 散热条件 最大尺寸 最大功率 芯片 封装 

分 类 号：TN312.8[电子电信—物理电子学] H314.3[语言文字—英语]