铜在金电极表面的选择性化学镀富集的研究  

Investigations of the Selective Enrichment of Cu^(2+) on Gold Electrode by Electroless Deposition

作　　者：邱健[1] 景粉宁[1] 何丽君[1] 王春明[1] 

机构地区：[1]兰州大学化学化工学院,兰州730000

出　　处：《分析化学》2005年第5期623-626,共4页Chinese Journal of Analytical Chemistry

基　　金：国家自然科学基金资助项目(No.20073017)

摘　　要：在具有催化还原活性的金电极表面,以水合肼为还原剂,在pH10.5酒石酸钾钠溶液中,通过化学镀方法,选择性地在金电极表面沉积了单层结构的铜膜。用开路电位时间谱技术(Op～t)、循环伏安法(CV)和微分脉冲伏安法(DPV)表征了该溶液还原法对铜进行选择性富集的机理和效果。证明在多种金属离子共存的复杂溶液体系中,可以避免其它离子的干扰,使铜选择性地富集到金电极表面。化学镀浴中富集到金电极表面的单层铜膜溶出电流与Cu2+的浓度在3×10-6～1×10-4mol/L范围内呈线性关系。该法已用于矿样中铜的还原富集、分离和测定,分析结果与电感耦合等离子体发射光谱法(ICP/AES)作了比较,结果满意。The selectively reductive enrichment of Cu2+ on the catalytic surface of the Au electrode by using the method of the electroless deposition was studied. In the electroless bath of Cu2+ + 0.02mol/L potassium-sodium tartrate (pH 10.5) + 0.00195 mol/L N2H4, a monolayer Cu was electrolessly deposited on the catalytic surface of the Au electrode. The enriching mechanism was investigated by using open circuit potentialtime technology (Op similar to t), cyclic voltammetry and differential pulse voltammetry (DPV). It is found that the deposition of the Cu2+ on Au electrode possesses very good selectivity to a more complex solution system containing many other metal ions. A linear relationship between the DPV stripping current and the concentration of the Cu2+ ions in the electroless bath was observed in the range of 3 x 10(-6) similar to 1 X 10(-4) mol/L. The developed method was applied to the enrichment, reduction, separation and determination of the Cu2+ ions in the ore samples. The analytical results were compared with those of inductive coupled plasma-atomic emission spectrometric method.

关 键 词：铜粒子 化学镀工艺 伏安法 还原剂 电沉积法 分离方法 

分 类 号：TQ153[化学工程—电化学工业]