基于热绝缘的多孔硅技术及其在微传感器中的应用  

Thermal Isolation with Porous Silicon Technology and the Application in the Micro-sensors

作　　者：田斌[1] 胡明[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《无机材料学报》2005年第3期545-549,共5页Journal of Inorganic Materials

基　　金：国家自然科学基金(60071027;60371030)天津市自然科学基金(023603811)

摘　　要：介绍了多孔硅的热导率特性以及孔径、孔隙率、热处理等因素对其影响.分析了目前基于热绝缘的多孔硅制备技术发展现状,着重对阶梯电流法和脉冲电流法进行了介绍和比较, 认为脉冲电流法因为其特殊的优势,将在以后的发展中得到更广泛的应用.多孔硅由于其热绝缘特性以及技术优势,已经在微传感器领域得到广泛的应用.The thermal conductivity performance of porous silicon and the influence such as aperture, porosity and oxidation treatment are introduced. The state of art of thermal isolation with porous silicon technologies are presented, especially the step current method and pulse current method. It is thought that the pulse current methods will be used abroad because of their special superiorities. Porous silicon has been used broadly in the fields of micro-sensors because of its special thermal isolation performance and advantages in technology.

关 键 词：多孔硅 热绝缘 热导率 微传感器 

分 类 号：TN402[电子电信—微电子学与固体电子学]