硅掺杂PMS-PZT材料的晶界行为对畴结构和压电性能的影响  

Domain Morphology and Piezoelectric Properties of Si-doped PMS-PZT Piezoelectric Ceramics Affected by Grain Boundary Action

作　　者：朱志刚[1] 李宝山[1] 李国荣[1] 郑嘹赢[1] 殷庆瑞[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《无机材料学报》2005年第3期641-646,共6页Journal of Inorganic Materials

基　　金：国家863项目(2001AA325030)973项目(2002CB613306)

摘　　要：运用XRD、TEM、EDS等实验手段,研究了Si离子掺杂对PMS-PZT材料的相结构、微观结构以及电畴形貌的影响.XRD测试结果表明,所有材料都显示钙钛矿结构,四方度(c/a)随着掺杂量的增加而增大.TEM研究结果表明,随着Si离子掺杂量的增加,电畴的形貌由鱼刺型过渡到微米级的带状畴,最后转变为波浪状的电畴.EDS表明在材料的晶界处含有纳米级的SiO2和PbSiO3,并且发现单斜晶系的孪晶ZrO2在晶界附近析出.本文对孪晶ZrO2的析出及其析出量随着硅离子含量增加而增加的原因作了解释,最后对材料压电性能的降低进行了探讨.The microstructure, phase properties and domain morphology of Si-doped PMS-PZT ceramics were investigated by using X-ray diffraction (XRD), transmission electron microscope (TEM) and energy dispersive spectrometry (EDS). XRD results indicate that all specimens show perovskite structure and tetragonal distortion (c/a) increases as the dopant content increases. TEM results show that domain morphology evolves from the normal herringbone domain to micron-sized lenticular shape domain structure, and finally changes to ' wavy ' pattern as SiO2 content changes from 0 similar to 1wt%. The nano-scale secondary phases Of SiO2 and PbSiO3 were observed on the grain boundary, and the twinned ZrO2 was found surrounded by PMS-PZT perovskite phase. The mechanism of the appearance of twinned ZrO2 and its content increase with the increase of Si concentration were discussed.

关 键 词：锑锰锆钛酸铅 TEM 压电 电畴 

分 类 号：TQ174[化学工程—陶瓷工业] TM282[化学工程—硅酸盐工业]