铌表面固体粉末包埋渗硅研究  

Microstructure and Mechanism of Pack Siliconizing on Niobium

作　　者：李明[1] 宋力昕[1] 乐军[1] 宋学平[2] 郭占成[2] 

机构地区：[1]中国科学院上海硅酸盐研究所特种无机材料研究发展中心,上海200050 [2]中国科学院过程工程研究所,北京100080

出　　处：《无机材料学报》2005年第3期764-768,共5页Journal of Inorganic Materials

摘　　要：采用固体粉末包埋渗硅工艺在铌表面制备了二硅化铌涂层,研究了渗硅过程中Si沉积的反应机理和二硅化铌涂层的结构.结果表明:涂层由单相的二硅化铌组成;Si的输运和沉积主要依靠硅的低氟化物SiF2完成.NbSi2 coating was formed on niobium by halide-activated pack cementation process. The microstructure of the as-formed coating and the possible reactions of Si deposition were investigated. The results indicate that the as-formed coating consists of single phase of NbSi2. SiF2 is responsible for the transportation and deposition of Si in the pack.

关 键 词：渗硅 涂层 铌 二硅化铌 

分 类 号：O484[理学—固体物理]