厚膜EMI滤波器用X7R介质瓷料的研究  

Study on X7R Dielectric Material for Thick Film EMI Filter

作　　者：李玲霞[1] 郭炜[1] 吴霞宛[1] 王洪儒[1] 张志萍[1] 余昊明[1] 

机构地区：[1]天津大学,天津300072

出　　处：《稀有金属材料与工程》2005年第5期764-767,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金委员会资助(50172035)

摘　　要：利用先驱体NiNb2O6与MnNb2O6掺杂法改性BaTiO3系统。由于2种先驱体可以有效地起到展宽与移峰效应,使系统居里峰在室温附近取得最大值,在1290℃烧结时介电常数达到5000以上,容量变化率ΔC/C≤±15%;在系统中加入适量助熔剂可以实现中温烧结(1150℃),介电常数大于3600,容量变化率ΔC/C≤±12%,满足X7R特性要求,可用于厚膜EMI滤波介质瓷料的制备。The dielectric properties of BaTiO3-system were improved doping with NiNb2O6 and MnNb2O6. These precursors can broaden and shift the Curie peak so that the maximum of dielectric constant was obtained near room temperature. The permittivity was about 5000 with sintering temperature. 1 290 degrees C and the percentage of capacitance change was less than +/- 15%. The addition of adequate flux to BaTiO3 system can realize intermediate temperature sintering (1 150 degrees C). The permittivity was above 3 600 and the percentage of capacitance change is less than +/- 12%, which was satisfied X7R specification. When preparing the thick film EMI filter dielectric material, it had better adopt the intermediate temperature sintering.

关 键 词：EMI滤波器 X7R 瓷料 介质 厚膜 容量变化率 BaTiO3 介电常数 5000 中温烧结 先驱体 C/C 掺杂法 最大值 居里峰 助熔剂 在系统 

分 类 号：TN704[电子电信—电路与系统]