Bi^(80+)辐射复合过程的计算  

Radiative recombination processes of Bi^(80+)

作　　者：曾思良[1] 逄锦桥[1] 李萍[1] 李月明[1] 颜君[1] 王建国[1] 

机构地区：[1]北京应用物理与计算数学研究所计算物理重点实验室,北京100080

出　　处：《物理学报》2005年第6期2625-2632,共8页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10344001和10174009)资助的课题.~~

摘　　要：基于Dirac_Slater自洽场方法,计算了Bi79+离子从低能到高能的光电离截面以及其逆过程Bi80+的辐射复合截面;分析了Kramers公式的适用性;考察了多极效应、相对论效应在不同能区对辐射复合截面的影响;计算了Bi80+离子在电离阈值附近的辐射复合截面和辐射复合速率系数,考察了自由电子分布函数及电子的温度变化对速率系数的影响,并将计算结果同高精度的储存环合并束实验进行了对比.The Dirac-Slater method is used to calculate the photoionization cross sections of Bi79+, from low to high energy. The numerical results are compared with those calculated by the quasi-classical Kramers formula, and the validity of Kramers formula is analyzed. The relativistic effects and multipole contributions of the photoionization processes are also discussed. For the comparison with the merged-beam rate coefficients, the theoretical rate coefficients were evaluated with the experimental electron-velocity distribution function( characterized by the temperatures) parallel and perpendicular to the electron-beam direction. Though the effects of relativity are considered in the present work, the measured rate coefficients exceed our results in the energy range close to the threshold.

关 键 词：多极计算 辐射复合 光电离 Bi离子 相对论效应 等离子体 

分 类 号：O536[理学—等离子体物理]