新型集成阵列四象限CMOS光电传感器的研制  

Research of a New Integrated Arrayed 4 Quadrants CMOS Photo-Electric Sensor

作　　者：周鑫[1] 朱大中[1] 

机构地区：[1]浙江大学信息与电子工程学系微电子技术与系统设计研究所,浙江杭州310027

出　　处：《电子学报》2005年第5期928-930,共3页Acta Electronica Sinica

基　　金：国家自然科学基金(No.90307009)

摘　　要：　本文介绍了一种用于目标跟踪和坐标定位的新型集成阵列四象限CMOS光电传感器.该传感器采用上华0.6μm标准CMOS工艺制造,实现了象限传感器与后端信号处理电路的单片集成.该传感器由16×16单元有源光电管阵列,相关二次采样电路和时序控制电路组成.每个有源光电管的大小为60μm×60μm,其感光面积百分比(FillFactor)为64.5%.通过变频二次扫描的工作模式可将传感器的感光动态范围增大为84dB.传感器的感光灵敏度为2V/lx·s,工作速度根据目标照度可在2ms/帧～64ms/帧范围内调整.A new integrated arrayed 4 quadrants CMOS photo-electric sensor used for target coordinate obtaining and target tracking is designed and fabricated in a 0.6 μ m standard CMOS process. It realizes the single chip integration of the quadrants sensor and subsequent signal processing circuits. It consists of 16 × 16 active photodiodes (PD) array, correlated double sampling (CDS) circuits and digital control part. The area of each active PD is 60 μm × 60 μ m and the fill factor is 64.5%. The dynamic range (DR) of the sensor can be enlarged with reset frequency adjustment double scanning method. As a result, 84 dB DR can be obtained. The sensitivity of sensor can be 2 V/lx &middot s and the sensor operation speed can be 2 ms/frame-64 ms/frame according to illuminance intensity.

关 键 词：阵列式象限传感器 相关二次采样 互补金属氧化物半导体光电传感器 动态范围调整 二次扫描 

分 类 号：TN432[电子电信—微电子学与固体电子学]