Near infrared polymer light-emitting diodes  

作　　者：ZHANGYong YANGJian HOUQiong MOYueqi PENGJunbiao CAOYong 

机构地区：[1]KeyLaboratoryofSpeciallyFunctionalMaterialsandAdvancedManufacturingTechnology,InstituteofPolymerOptoelectronicMaterialandDevices,SouthChinaUniversityofTechnology,Guangzhou510640,China

出　　处：《Chinese Science Bulletin》2005年第10期957-960,共4页

基　　金：This work was supported by the State 973 Project(Grant No.2002CB6 13405);the National Natural Science Foundation of China(Grant No.90201023).

摘　　要：High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/Al, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] de- rivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7- bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm2. The improvement of the diode’s performances was consid- ered to be the irradiative excitons confined in the interface between L1 and L2 layers.High efficiency of near infrared polymer light-emitting diodes with bilayer structure was obtained. The diode structure is ITO/PEDOT/L1/L2/Ba/A1, where L1 is phenyl-substituted poly [p-phenylphenylene vinylene] derivative (P-PPV), L2 is 9,9-dioctylfluorene (DOF) and 4,7-bis(3-hexylthiophen)-2-yl-2,1,3-naphthothiadiazole (HDNT) copolymer (PFHDNT10). The electroluminescence (EL) spectrum of diodes from PFHDNT10 is at 750 nm located in the range of near infrared. The maximum external quantum efficiency is up to 2.1% at the current density of 35 mA/cm(2). The improvement of the diode's performances was considered to be the irradiative excitons confined in the interface between L1 and L2 layers.

关 键 词：近红外线 聚合体 发光二极管 场致发光 

分 类 号：TN364.2[电子电信—物理电子学]