纳米结构TiO_2/3-甲基噻吩和2-噻吩甲酸共聚物复合膜电极光电化学性能  

Photoelectrochemical Performance of Nanostructured TiO_2/CTCMT Composite Film Electrode

作　　者：郝彦忠[1] 武文俊[2] 

机构地区：[1]河北科技大学理学院 [2]河北科技大学化学与制药工程学院,石家庄050018

出　　处：《高等学校化学学报》2005年第6期1098-1101,共4页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:20203008);河北省自然科学基金(批准号:202351);河北省教育厅博士基金(批准号110611)资助.

摘　　要：用光电流作用谱、光电流-电势图等光电化学方法研究了ITO/3-甲基噻吩和2-噻吩甲酸共聚物(CTCMT)膜电极和ITO/TiO2/CTCMT复合膜电极的光电转换性质.结果表明,CTCMT膜为p型半导体,禁带宽度为2.36eV,价带位置为-5.52eV.在ITO/TiO2/CTCMT复合膜电极中存在p-n异质结,在一定条件下异质结的存在有利于光生电子-空穴对的分离.CTCMT膜修饰ITO/TiO2电极可使光电流增强,光电流起始波长红移至600nm以上,使宽禁带半导体电极的光电转换效率得到改善.The photon-current conversion properties of nanostructured TiO_2/CTCMT composite film electrode were studied by using the photocurrent action spectra and the photocurrent dependence of potential. The bandgap of CTCMT film is 2.36 eV. The diagram of energy level of CTCMT film was determined with cyclic voltamogram and photoelectrochemical method. The valence band of CTCMT film is -5.52 eV, the conduction band is -3.16 eV, the p-n heterojuction exists in the nanostructured TiO_2/CTCMT film electrode, which favors the separation of electron/hole pairs generated by photoexcitation. The nanostructured TiO_2/CTCMT film electrode can enlarge the visible optical absorption region and obviously increase the photocurrent. The photocurrent threshold shifts to more than 600 nm, thus the photoelectric conversion efficiency is improved.

关 键 词：TiO2/CTCMT复合膜电极 光电化学 导电聚合物 

分 类 号：O646[理学—物理化学]