CdZnTe晶片表面钝化研究  

Surface passivation of CdZnTe wafer

作　　者：汪晓芹[1] 介万奇[1] 周安宁[2] 李焕勇[1] 

机构地区：[1]西北工业大学材料科学与工程学院,陕西西安710072 [2]西安科技大学化学与化工系,陕西西安710054

出　　处：《功能材料》2005年第6期856-858,共3页Journal of Functional Materials

摘　　要：用NH4F/H2O2对Br2MeOH抛光CdZnTe晶片表面进行了表面钝化处理,通过IV测试及XPS分析分别对钝化前后的CZT晶片的电学性能和表面组成进行了表征。IV测试结果表明NH4F/H2O2对CdZnTe晶片表面有较好的钝化效果,电流下降率随所加偏压的增加而下降。在10V偏压下,电流下降最明显,下降率为73.7%。与欧姆定律发生偏离的临界场强为333V/cm。XPS分析发现,用NH4F/H2O2处理可使CdZnTe表面富集的Te79.28%被氧化成TeO2,氧化层的厚度约为3.15nm。钝化后的表面更接近CdZnTe的化学计量配比。CdZnTe wafer was passivated with NH4F/H2O2 solution after the chemical polishing with Br2-MeOH solution. The electricity property was characterized with I-V measurement and the surface composition was quantitatively measured with XPS analyses. I-V measurement showed that the CZT wafer surface was significantly passivated after the treatment. The dropping rate of current reduced with increasing the bias voltage. At the bias voltage of 10 V, the current dropping rate was the highest, about 73.7%. The critical field intensity was about 333 V/cm, at which I-V curves began to deviate from ohm law. Through XPS analyses, it was found that about 79.28% of Te in CZT surface layer was oxided to form TeO2. The depth of oxided layer was about 3.15 nm. The composition of passivated surface became more close to the stoichiometric one.

关 键 词：CDZNTE 表面漏电流 钝化 TeO2 

分 类 号：TL816[核科学技术—核技术及应用]