片式BaTiO_3基PTCR瓷片的制备及烧结工艺的研究  

Study on Preparation and Sinter-System of BaTiO_3-based Chip PTCR

作　　者：刘欢[1] 龚树萍[1] 周东祥[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《压电与声光》2005年第3期267-269,共3页Piezoelectrics & Acoustooptics

基　　金：国家"八六三"计划基金资助项目(2001AA325040)

摘　　要：以轧膜成型工艺制备的BaTiO3基热敏电阻(PTCR)坯片为对象,研究了烧结工艺对其电性能的影响。结果表明,通过控制烧结温度的各参数,可优化成BaTiO3基热敏电阻的电性能。且获得室温电阻低于10Ω、升阻比达5个数量级且耐电压高于50V/mm的片式PTCR瓷片,尺寸为8mm×5mm×0.22mm。In this paper, many experiments are conducted to discuss the influences of various sintering conditions on the electrical property of chip PTCR formed by rolling process.The results show that the preparation of BaTiO_3-based chip PTCR with good electrical property could be made easier by controlling the parameters of sinter-system. The size of sample finally obtained is 8 mm×5 mm×0.22 mm,with its R_(25)<10 Ω,V_b>50 V/mm and β>10~5.

关 键 词：片式PTCR 轧膜成型 烧结工艺 

分 类 号：TN605[电子电信—电路与系统]