Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects  

在n型硅基底上二次注入硼离子金刚石膜的p-n结效应(英文)

作　　者：孙秀平[1] 冯克成[1] 李超[1] 张红霞[2] 费允杰[2] 

机构地区：[1]长春理工大学,长春130022 [2]中国科学院物理研究所,北京100080

出　　处：《Journal of Semiconductors》2005年第6期1073-1076,共4页半导体学报（英文版）

基　　金：国家自然科学基金资助项目(批准号:50072045)~~

摘　　要：Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distribution of the implanted element,boron ions are implanted by two steps:implanting boron ions with the energy of 70keV first,and then with the energy of 100keV.The homogeneous distribution of the B ion is gained.The current-voltage characteristics of the samples are studied.It is found that the p-n heterojunction effect is achieved in these samples.在n型Si衬底上用热丝化学气相沉积方法制备了多晶金刚石膜,用200keV的离子注入机在金刚石膜中进行了二次硼离子注入,第一次注入能量为70keV,第二次注入能量为120keV,获得了硼离子的均匀分布,测试了样品的I-V特性,发现其具有明显的pn异质结效应.

关 键 词：ion implantation diamond film p-n junction 

分 类 号：TN304.1[电子电信—物理电子学]