ZnTe插层对CdS/CdTe光伏器件性能的影响  

Influence of ZnTe Insertion Layer on CdS/CdTe Photovoltaic Device Performance

作　　者：宋慧瑾[1] 鄢强[1] 郑家贵[1] 冯良桓[1] 武莉莉[1] 张静全[1] 蔡伟[1] 蔡亚平[1] 李卫[1] 黎兵[1] 

机构地区：[1]四川大学太阳能材料与器件研究所,成都610064

出　　处：《真空科学与技术学报》2005年第2期105-109,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家高技术研究发展计划(No.2003AA513010);国家自然科学基金(No.50076030)资助项目

摘　　要：从理论上分析了CdS/CdTe/Au器件的暗态、高正偏压下电流饱和(Roll over)和光照、高正偏压下光暗I V曲线相交(Crossover)现象。通过对比有无插层的CdTe太阳电池在C V、I V特性和光谱响应的不同,肯定了插层对改善背接触特性的作用;发现它还可以改善器件前结CdS/CdTe的二极管特性和短波光谱响应。实验结果还表明,不掺杂的ZnTe对提高器件的效率是必要的。恰当的不掺杂层厚度和退火温度能最有效地改进CdTe太阳电池的性能,而对填充因子的提高最为显著。CdS/CdTe photovoltaic device with an insertion layer of ZnTe was fabricated and studied. The mechanisms responsible for the roll over and cross over phenomena observed in CdS/CdTe/Au system was tentatively analyzed. We found that ZnTe insertion layer considerablely improves the characteristics of the back-contact CdTe solar cells, as it can be easily seen by comparing the C-V and I-V characteristics and the spectral response of the CdTe solar cells with and without insertion layer. In addition, ZnTe insertion layer improves the diode characteristics of the forward junction and the short-wave spectral response of the CdS/CdTe solar cells. Interesting finding is that a layer of undoped ZnTe and its annealing temperature significantly affect the solar cell conversion efficiency, particularly its fill factor.

关 键 词：CDTE ZNTE CdS 器件性能 插层 光伏 太阳电池 光谱响应 I-V曲线 I-V特性 电流饱和 接触特性 退火温度 填充因子 二极管 压下 掺杂 短波 

分 类 号：TN304.25[电子电信—物理电子学] TN383