磁控溅射法制备IrMn底钉扎自旋阀研究  

Investigation on high vacuum magnetron sputtered IrMn bottom spin valves

作　　者：欧阳可青[1] 任天令[1] 刘华瑞[1] 曲炳郡[1] 刘理天[1] 李伟 

机构地区：[1]清华大学微电子学研究所,北京100084 [2]深圳华夏磁电子公司,深圳518004

出　　处：《功能材料与器件学报》2005年第2期143-148,共6页Journal of Functional Materials and Devices

摘　　要：采用高真空直流磁控溅射的方法,在玻璃衬底上制备了结构为Ta/bufferlayer/IrMn/CoFe/Cu/CoFe/NiFe/Ta的IrMn底钉扎自旋阀。研究了NiFe和Cu作为缓冲层对自旋阀磁性能的影响,并对缓冲层厚度进行了参数优化,当缓冲层厚度为2nm时自旋阀各项性能达到最佳。研究了退火制度对底钉扎自旋阀性能的影响,得到了3000Oe强磁场下200℃保温1h为最佳处理条件。通过结构的改善和工艺的优化,得到的底钉扎自旋阀的磁电阻率8.51%,矫顽场为0.5Oe,交换偏置场超过800Oe。最后对自旋阀的底钉扎和顶钉扎结构进行了比较。The IrMn bottom spin valves, with structure of Ta/buffer layer/IrMn/CoFe/Cu/CoFe/NiFe/Ta, were deposited on glass substrate by high vacuum DC magnetron sputtering method. The effect of NiFe and Cu buffer layer was investigated, and an optimized thickness (2 nm) of buffer layer is proposed for the bottom pinned structure. The thermal annealing effect on the GMR properties in bottom pinned structure was discussed. The spin valves get high MR ratio (>8.5%), low coercivity ( less than or equal 0.8 Oe), and high exchange bias field (>8000 e) after the optimizing the structure parameters and annealing conditions. Spin valve with bottom structure is compared with which with top structure.

关 键 词：自旋阀 底钉扎 巨磁电阻 退火效应 

分 类 号：O482.52[理学—固体物理]