不同烧结工艺对TiO_2基压敏陶瓷电性能的影响  

Influence of sintering processes on the electrical properties of TiO_2-based varistor ceramics

作　　者：孟凡明[1] 

机构地区：[1]安徽大学物理与材料科学学院安徽省信息材料与器件重点实验室,合肥230039

出　　处：《功能材料与器件学报》2005年第2期149-152,共4页Journal of Functional Materials and Devices

基　　金：安徽省教育厅科研基金资助项目(No.2005KJ224);安徽省高等学校教学研究项目(No.X200521);安徽省信息材料与器件重点实验室课题资金资助项目

摘　　要：分别采取四种不同的工艺过程,按照配方TiO2+0.3mol%(SrCO3+Bi2O3+SiO2)+0.075mol%Ta2O5制备四种试样。通过压敏电压、非线性系数、复阻抗特性、伏安特性、势垒高度、介电频率特性和损耗频率特性的测定,研究了一次烧成、粉料预烧及预烧方式对TiO2基压敏陶瓷电性能的不同影响。结果表明,采取一次烧成工艺制备的试样具有压敏电压较低(E10mA=7.9V·mm-1)、介电常数较大(εra=5.88×104)等特性,并从理论上对此作出一定的分析。Samples were prepared by four different processes, with the same formulation of 0.3mol% (SrCO3 + Bi2O3 + SiO2) + 0.075mol% Ta2O5. The influences of single sinter process and presinter process on the electrical properties of TiO2-based varistor ceramics were studied. It was measured with breakdown voltage, nonlinear exponent, complex impedance, I-V, barrier height, dielectric constant and dissipation. It is found that single sinter process makes breakdown voltage lower (E10 mA=7.9 V · mm-1) and apparent dielectric constant bigger (εra=5.88 × 104). And it is analyzed theoretically.

关 键 词：TiO2基压敏陶瓷 压敏电压 非线性系数 介电常数 半导化 损耗 

分 类 号：TN304.93[电子电信—物理电子学]