聚碳硅烷裂解中的氧影响分析  

Analysis of Effect of Trace Slight Oxygen on Pyrolysis of Polycarbosilane

作　　者：陈曼华[1] 陈朝辉[1] 肖安[1] 

机构地区：[1]国防科技大学航天与材料工程学院CFC重点实验室,长沙410073

出　　处：《宇航材料工艺》2005年第3期28-30,共3页Aerospace Materials & Technology

摘　　要：以不同纯度的氮气为保护性气氛,采用差热法和红外光谱法研究微量氧对聚碳硅烷裂解的影响,并讨论了在有微量氧的气氛下,不同裂解条件对陶瓷产率的影响。结果表明,氧可以与聚碳硅烷起氧化反应,形成含氧基团,使裂解产物增重。合理地控制气氛流量、升温速率、试样量等裂解工艺条件,可有效地抑制氧对聚碳硅烷裂解的影响。当升温速率为30℃/min、氮气流量为80mL/min时,气氛中微量氧的氧化程度降至最低,试样的陶瓷产率接近于实际值。Effects of trace oxygen on pyrolysis of polycarbosilane with different purity of nitrogen used as protective atmosphere are studied by TG and IR and effect of processing conditions in pyrolysis on ceramic yield is discussed under trace oxygen atmosphere. It is found that polycarbosilane can be oxidezed and weight of product pyrolyzed is increased because oxygenous bases are formed .The influence of oxidation on ceramic conversion can be effectively restrained by reasonable processing conditions in pyrolysis, such as sample weight, heating rates and N 2 flow. It is shown that oxidation effect of trace oxygen atmosphere on pyrolysis of polycarbosilane is low and ceramic yield of sample approaches actual one at 30℃/min heat rate and 80 mL/min N 2 flow.

关 键 词：先驱体转化法 聚碳硅烷 裂解工艺 氧化反应 航空材料 

分 类 号：V254[一般工业技术—材料科学与工程]