非晶微晶两相硅薄膜电池的计算机模拟  

Computer simulation of a-Si:H/μc-Si:H diphasic silicon solar cells

作　　者：郝会颖[1,2] 孔光临[1] 曾湘波[1] 许颖[1] 刁宏伟[1] 廖显伯[1] 

机构地区：[1]中国科学院半导体研究所凝聚态物理中心,表面物理国家重点实验室 [2]中国地质大学(北京)材料科学与工程学院,北京100083

出　　处：《物理学报》2005年第7期3370-3374,共5页Acta Physica Sinica

基　　金：国家重点基础研究发展规划项目(批准号:G2000028201)资助的课题.~~

摘　　要：在对不同晶相比硅薄膜的实验研究的基础上,利用有效介质理论估算了这种两相材料的光吸收系数、迁移率寿命乘积及带隙宽度等参量,计算机模拟了不同结晶比硅薄膜电池的伏安特性及光谱响应;结果为随着本征层微晶成分的增多,电池的开路电压逐渐减小,短路电流逐渐增大,本征层的最佳厚度逐渐增大,填充因子有降低的趋势,电池的效率随晶相比的增大而减小.电池的光谱响应曲线表明,随晶相比的增大电池的长波响应明显提高.根据这些模拟结果,分析讨论了在考虑Lambertian背反射的情况下,非晶微晶叠层电池的底电池采用晶相比为40%—50%的两相硅薄膜材料做本征层是最佳选择.Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si:H/μc-Si:H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem.

关 键 词：计算机模拟 薄膜电池 微晶 非晶 光谱响应 光吸收系数 本征层 实验研究 两相材料 理论估算 有效介质 带隙宽度 伏安特性 开路电压 短路电流 最佳厚度 填充因子 模拟结果 分析讨论 薄膜材料 叠层电池 相比 增大 硅薄膜 迁移率 

分 类 号：TM914.4[电气工程—电力电子与电力传动] TP391.9[自动化与计算机技术—计算机应用技术]