用于微器件加工的AZ4620厚胶光刻工艺研究  

Technical Study of AZ4620 Thick Photoresist for Micro Fabrication

作　　者：罗铂靓[1] 杜惊雷[1] 唐雄贵[1] 杜春雷[2] 刘世杰[3] 郭永康[1] 

机构地区：[1]四川大学物理学院,成都610064 [2]微细加工光学技术国家重点实验室,成都610209 [3]陕西理工学院物理系,陕西汉中723001

出　　处：《半导体技术》2005年第7期34-38,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60276018;60376018;60376021)微细工加光学技术国家重点实验室基金资助项目(0F03001;0F03002)

摘　　要：对AE4620厚胶紫外光刻工艺进行了实验研究,探讨了其工艺特性及光刻胶层的刻蚀面形与各种工艺条件的关系,提出了刻蚀高深宽比、最佳浮雕面形所需的工艺条件。通过对光刻工艺过程的研究, 可为较好地控制正性光刻胶面形,制作微机械、微光学器件提供了参考依据,对微浮雕结构的深刻蚀具有重要的指导意义。AZ4620 photoresist is a widespread availability thick photoresit for micro fabrication. Technical study of this thick resist for ultraviolet- lithography was carried out, and the relation between processing property, lithographic results and various technological conditions are explored, then the optimization conditions for etching high depth-to-width ratio and relief are given figure. We can better control the positive photoresist figure, provide a reference for making MEMS and MOEMS, it is of an important instructional significance for deep relief of micro structure.

关 键 词：光刻胶 前烘 曝光 显影 

分 类 号：TN305.7[电子电信—物理电子学]