高功率半导体激光器的电噪声  

The Electric Noise of High-power Semiconductor Laser

作　　者：石英学[1] 王雪丹[1] 石家纬[1] 李靖[1] 郭树旭[1] 

机构地区：[1]集成光电子学国家重点联合实验室吉林大学试验区,长春130012

出　　处：《吉林大学学报（理学版）》2005年第3期354-357,共4页Journal of Jilin University:Science Edition

基　　金：国家自然科学基金(批准号: 60471009 );吉林省自然科学基金 (批准号: 20020634 );吉林省科技项目基金 (批准号:20040301 4)

摘　　要：对高功率量子阱半导体激光器的爆破噪声和可能来自相同缺陷源的产生复合噪声(g r噪声)进行了研究. 实验结果表明, 如果老化电流远高于阈值电流Ith, 爆破噪声和g r噪声将会被引入, 甚至会出现多重g r噪声. 通过对比样品老化前后光电导数的特征参量发现, 老化后产生爆破噪声和g r噪声的器件为失效器件, 表明高功率量子阱半导体激光器在使用和老化过程中有时会伴有爆破噪声和g r噪声. 通过缺陷能级理论和p n结势垒高度变化, 讨论了爆破噪声、g r噪声及多重g r噪声产生的原因.The burst and g-r (generation-recombination) noise in high-power quantum well semiconductor lasers were studied theoretically and experimentally. The results indicate that they are related with the aging current. Maybe they come from the same defects source. If the aging current is much larger than the threshold current I_ th , the burst noise and the g-r noise will be induced, even multi-g-r noise appears. By comparing the characteristic parameters of optic and electric derivative curves before and after aging, it is discovered that the device which produces burst and g-r noise after aging is failure device. The reasons of producing burst, g-r noise and multi-g-r noise are discussed on the basis of the theory of the defect energy level E_t and the variation of the height of the potential barrier of p-n junction.

关 键 词：电噪声 半导体激光器 可靠性 

分 类 号：TN365[电子电信—物理电子学]