Sr引起的(Co,Ta)掺杂SnO_2压敏陶瓷的晶粒尺寸效应(英文)  

Grain Size Effects of (Co, Ta)-doped SnO_2 Varistor Induced by Doping Sr

作　　者：王矜奉[1] 陈洪存[1] 苏文斌[1] 臧国忠[1] 王春明[1] 

机构地区：[1]山东大学物理与微电子学院晶体材料国家重点实验室,山东济南250100

出　　处：《电子元件与材料》2005年第7期1-4,共4页Electronic Components And Materials

基　　金：Supported by National Natural Science Foundation of China (Grant No.50072013);the Natural Science Foundation of Shandong Province,China (No. Z2003F04)

摘　　要：研究了SrCO3对(Co,Ta)掺杂的SnO2压敏陶瓷的微观结构和电学性质的影响。当x(SrCO3)从0增加到2.5%,该SnO2压敏陶瓷的压敏临界电场强度从318V/mm猛增到3624V/mm,而相对介电常数从1509大幅降至69。当x(SrCO3)为2.0%时,样品的压敏电场和非线性系数分别为2204V/mm和24;添加x(SrCO3)为2.5%的样品的压敏电场和非线性系数分别为3624V/mm和22。The effects on the microstructure and electrical properties of (Co, Ta)-doped SnO2 varistors upon the addition of SrCO3 were investigated. The threshold electric field of the SnO2 based varistors increased significantly from 318 V/mm to 3 624 V/mm, the relative dielectric constants of the SnO2 based varistors decreased greatly from 1 509 to 69 as SrCO3 concentration was increased up to 2.5 mol%. Varistors were found to have superhigh threshold voltage and comparatively large nonlinear coefficient α. For 2.0 mol% SrCO3-doped sample, threshold electrical field E and nonlinear coefficient α were 2 204 V/mm and 24, and for 2.5 mol% SrCO3-doped sample, E and α were 3 624 V/mm and 22.

关 键 词：压敏陶瓷 SNO2 晶粒尺寸效应 掺杂 非线性系数 相对介电常数 SrCO3 电学性质 微观结构 电场强度 样品 

分 类 号：TN304.21[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业]