GaAs量子阱半导体微腔中腔极化激元的动态行为(英文)  

Dynamics of Cavity Polaritons in a GaAs Quantum-well Semiconductor Microcavity

作　　者：刘文楷[1] 安艳伟[1] 林世鸣[2] 张存善[3] 张常年[1] 

机构地区：[1]北方工业大学信息学院,北京100041 [2]中国科学院半导体研究所集成光电子国家重点实验室,北京100083 [3]河北工业大学信息学院,天津300130

出　　处：《光子学报》2005年第5期793-796,共4页Acta Photonica Sinica

摘　　要：GaAs量子阱半导体微腔中, 光子同时与重空穴激子、轻空穴激子耦合形成腔极化激元 本文采用三谐振子耦合模型,计算了腔极化激元的三支的色散关系、线宽、有效质量及其群速度;结果表明,由于腔极化激元的三支中光子、重空穴激子、轻空穴激子所占的权重随着平面波矢(或入射角度)变化,腔极化激元三支的线宽、有效质量及其群速度呈现出不同的动态行为。To provide the dynamics of cavity polariton in semiconductor microcavity containing GaAs quantum-well, the dispersions of the three cavity polaritons have been given by the model of three coupled oscillators, meanwhile the linewidths, group velocities and the mass of the three cavity polaritons have been demonstrated. The results indicated that because of the weight occupied by the photon, heavy hole exciton and light hole exciton in the three cavity ploariton the cavity polaritons exhibited different dynamic behaviors.

关 键 词：光子 激子 腔极化激元 量子阱 半导体微腔 

分 类 号：TN248.4[电子电信—物理电子学]