MoO_3掺杂对BiNbO_4陶瓷微波介电性能的影响  

Effect of Doping MoO_3 on Microwave Dielectric Properties of BiNbO_4 Ceramics

作　　者：毛羽[1] 丁士华[1] 张良莹[1] 姚熹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《电子元件与材料》2005年第6期12-14,共3页Electronic Components And Materials

基　　金：国家高新技术发展计划资助项目(2001AA325110);国家重点基础研究发展计划资助项目(2002CB613302);上海市重点学科建设资助项目

摘　　要：采用固相反应法,研究了MoO3掺杂对BiNbO4陶瓷微结构、烧结特性和微波介电性能的影响。对相对介电常数εr和品质因数Q随烧结温度的变化以及谐振频率温度系数随MoO3掺杂量的变化也进行了研究。MoO3的掺杂量x低于0.05时,实现了BiNbO4陶瓷在970℃以下的低温烧结,并且相转变温度也降低了约60℃。通过对εr以及介质损耗随温度的变化特性的研究,证实了缺陷偶极子对材料介电性能的影响。Investigated were microstructure, sintering behavior and microwave dielectric properties of BiNbO4 ceramics doped MoO3 by solid phase reaction method. Variations of dielectric constant εr, Q value with sintering temperature and that of temperature coefficient of resonator frequency with the content of MoO3 were investigated too. The doping amount of MoO3 did not surpass 5 mol%. BiNbO4 ceramics are sintered below 970℃ and its phase transition temperature is also lowered 60℃. Effect of defect dipoles on dielectric properties is approved by investigation of temperature dependence of dielectric constant εr and dielectric loss.

关 键 词：无机非金属材料 微波介质陶瓷 介电性能 掺杂 缺陷偶极子 

分 类 号：TM28[一般工业技术—材料科学与工程] TN61[电气工程—电工理论与新技术]